SEM image of the microcavity polariton LED device. Metal ring at the top serves as a p-type contact to the device, whereas n-type contact is made from the substrate
SEM image of the microcavity polariton LED device. Metal ring at the top serves as a p-type contact to the device, whereas n-type contact is made from the substrate. (c) Pavlos Savvidis
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device, lasing, polariton, semiconductor
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A step towards the realisation of ultra-efficient polaritonic devices

by Stanislav P. Abadjiev | 14 May 2008 17:00 GMT — Votes (16) Votes

The unique properties of polaritons - such as stimulated scattering, parametric amplification, lasing, condensation and superfluidity - can provide a basis for a new generation of polariton emitters and semiconductor lasers. Until now, polariton lasing and nonlinearities have been demonstrated in optical experiments.

In the current issue of Nature, a team of Greek researchers from the Department of Physics at University of Crete, led by S. Tsintzos, report an experimental realisation of an electrically pumped semiconductor polariton light-emitting device, which emits directly from polariton states at a temperature of 235 K (-38 C).

Polariton electroluminescence data reveal characteristic anticrossing between exciton and cavity modes, a clear signature of the strong coupling regime.

Authors believe these findings represent a substantial step towards the realisation of ultra-efficient polaritonic devices with unprecedented characteristics.

Source: Nature